Work

Recoverable Current Collapse Effect of p-GaN HEMTs Under Short Circuit Stress

Year: 2023

Type: conference-paper

Source: IEEE International Power Electronics and Application Symposium (PEAS)

DOI: 10.1109/peas58692.2023.10395456

Authors: Meng Wang, Xiangdong Li, Jincheng Zhang, Hongyue Wang, Junbo Wang, Zhanfei Han, Jiahui Yuan, Yue Hao

Institutions: Guangzhou Institute of Technology, Xidian University, China Electronic Product Reliability and Environmental Test Institute

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4391217536

FWCI: 2.303

Cites: 13

Cited by: 3

Related to: 10