Work

Fully Modular, Dynamic SiC and GaN Testbench with Automated Temperature and Gate-Voltage Characterization

Year: 2023

Type: conference-paper

Source: IEEE Design Methodologies Conference (DMC)

DOI: 10.1109/dmc58182.2023.10412598

Authors: Ruben Schnitzler, Dominik Koch, Erine Dos Santos Gomes, Ingmar Kallfass

Institution: University of Stuttgart

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4391306258

FWCI: 0.981

Cites: 15

Cited by: 2

Related to: 10