Work

Features of Chemical Etching of Track Structures

Year: 2023

Type: article

Abstract: . It is shown that computer simulation can be used to obtain important information about the mechanisms of etching of track structures. These data are necessary for the design and improvement of track biosensors. The etching process is simulated by appropriate modification of interatomic potentials. A new approach to studying the mechanisms of chemical etching of materials has been developed. A computer simulation method is used, which allows one to change the parameters of interatomic potentials in a certain mode during the simulation of the etching process. The main feature of the method is the creation of algorithms and new computer programs that make it possible to describe the coordinated change in the parameters of interatomic potentials (their “softening”), reproducing real chemical etching. The applied method for studying the mechanisms of chemical etching can be used in various technologies of electronic materials science. In the case of creating modern track biosensors, the use of appropriate chemical etching methods is especially important for improving these devices. This is due to the fact that the parameters of a track biosensor depend on the geometry of the track, its diameter, and the defective structure of the track walls. The study was carried out taking into account the three-layer structure of the track wall. Another option for using chemical etching is to study the defective structure of a material, in particular in the manufacture of biosensors, identifying the features of the threelayer structure of the track wall. The parameters of the biosensor depend on the nature of the interaction of particles of the “carrying” flow with the walls of the track. Therefore, it is important to ensure an optimal ratio of the mechanical characteristics of different defective layers forming the track wall. This is achieved by controlling the chemical etching process. In the future, the proposed method of computer modeling of the chemical etching process will be used in the study of dislocations and interfaces of multilayer and other materials.

Source: Acta Carpathica

DOI: 10.32782/2450-8640.2023.2.12