Work

Broadband Superluminescent Diodes Based on Multiple InGaAs/GaAs Quantum Well-Dot Layers

Year: 2023

Type: article

Source: Semiconductors

DOI: 10.1134/s1063782623030120

Authors: M. V. Maximov, Yu. M. Shernyakov, G. O. Kornyshov, O. I. Simchuk, N. Yu. Gordeev, A. A. Beckman, A. S. Payusov, S. A. Mintairov, N. A. Kalyuzhnyy, M. M. Kulagina, A. E. Zhukov

Institutions: Ioffe Institute, National Research University Higher School of Economics

Language: English

Topic: Semiconductor Quantum Structures and Devices

Subfield: Atomic and Molecular Physics, and Optics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4392858024

FWCI: 0.207

Cites: 17

Cited by: 2

Related to: 10