Drift suppression of solution-gated graphene field-effect transistors through electrolyte submersion
Year: 2024
Type: article
Abstract: In solution-gated graphene FETs (SG-GFETs), cations in electrolyte solutions can intercalate between graphene and SiO2. Such permeation affects substrate-induced hole doping effects, resulting in drifts in the charge neutrality point (CNP) of SG-GFETs. In this study, we investigated the effect of submerging GFETs in electrolyte solutions on CNP values. The results revealed that the CNP decreased considerably from approximately 180 mV to nearly zero with the increase in the immersion period. The CNP drifts during electrical measurements were also suppressed by the prolonged submersion. These insights can be used for developing improved SG-GFETs.
Source: Applied Physics Express
Institution: The University of Osaka
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $2,250
Award: G3272432402
OpenAlex ID: W4393029554