A next-generation light-emitting device: ZOGAN LED with a heterogeneous p-layer composed of oxide and nitride semiconductors
Year: 2024
Type: article
Abstract: We have developed a light-emitting device, called the ZOGAN light-emitting diode (LED). The ZOGAN LED is formed with the p-layer composed of both ZnO-based oxide and GaN-based nitride semiconductors. The ZOGAN LED shows the characteristics of light-emitting devices required for ultra-high-resolution displays.
Source: AIP Advances
DOI: 10.1063/5.0192350
Authors: Yung Ryel Ryu, Sung Ki Hong, E. Fred Schubert, Dong-Min Jeon, Dong-Soo Shin, Jong-In Shim, Sang-Mook Kim, Jong Hyeob Baek
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: gold
Estimated APC paid: $1,350
OpenAlex ID: W4394579658