Work

Raman evidence for the oxidation of amorphous As 2 (Se x S 1–x ) 3 film surfaces under visible light

Year: 2024

Type: article

Abstract: Raman spectra of thermally evaporated As 2 Se 3 and Se-rich (above 50 at. %) ternary As–Se–S films measured at high (above 1 MW cm −2 ) excitation power density reveal new narrow peaks emerging during the measurements which are attributed to crystalline arsenolite As 2 O 3 . The latter is formed on the As–Se–S film surface due to thermal decomposition of the film and oxidation of arsenic in ambient air. Contrary to As 2 S 3 , for which the photoassisted oxidation of the film surface requires UV light, for narrower-gap As–Se–S films this effect occurs under illumination by visible light.

Source: Materials Research Express

DOI: 10.1088/2053-1591/ad3f7b