Work

Moiré semiconductors on the twisted bilayer dice lattice

Year: 2024

Type: article

Abstract: We propose an effective lattice model for the moir\'e structure of the twisted bilayer dice lattice. In the chiral limit, we find that there are flat bands at the zero-energy level at any twist angle besides the magic ones and these flat bands are broadened by small perturbation away from the chiral limit. The flat bands contain both bands with zero Chern number which originate from the destructive interference of the states on the dice lattice and the topological nontrivial bands at the magic angle. The existence of the flat bands can be detected from the peak-splitting structure of the optical conductance at all angles, while the transition peaks do not split and only occur at magic angles in twisted bilayer graphene.

Source: Physical review. B./Physical review. B

DOI: 10.1103/physrevb.109.155159

Authors: Di Ma, Yu-Ge Chen, Yue Yu, Xi Luo

Institutions: Fudan University, Chinese Academy of Sciences, Institute of Physics, University of Shanghai for Science and Technology

Language: English

Topic: Topological Materials and Phenomena

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: green

Funder: National Natural Science Foundation of China

Award: G4043516595