Work

p-GaN Gate HEMTs on 6-Inch Sapphire by CMOS-Compatible Process: A Promising Game Changer for Power Electronics

Year: 2024

Type: article

Abstract: The ≥ 650 V power electronics market penetration by GaN HEMTs on Si has been impeded by the GaN buffer. Recently, GaN-on-sapphire, a promising solution, attracts great attentions. In this work, p-GaN gate HEMTs are successfully manufactured on 6-inch sapphire by CMOS-compatible process in our pilot line. Device process modules of p-GaN selective etching, low-temperature Ohmic contact, and Al2O3/SiO2passivation have all be realized. The fabricated devices withLGDof 16 μm and a simplified epitaxy and device structure, feature a lowRONof 14.8 Ω.mm, a highVTHof 2 V, and a high OFF-state breakdown voltage (BV) over 1360 V. Further, the nonuniformity of theRONandVTHacross the 6-inch whole wafer is well controlled. Devices also passed the preliminary reliability assessment of high temperature gate bias (HTGB) stress and high temperature reverse bias (HTRB) stress. The high-reliability, high-uniformity, and low-cost p-GaN gate HEMTs on 6-inch sapphire will probably be a strong driven force for the power electronics market in the near future.

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3401114