Work

Demonstration of EOT-Scaled FinFET Based on Thickness-Proportion Controlled HZH Superlattice Gate Stacks With Improved Thermal Stability (≥ 450 °C)

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3401411

Authors: Kun Zhong, Fan Zhang, Zhaohao Zhang, Qingzhu Zhang, Zhaozhao Hou, Chunsong Zhao, Genquan Han, Gaobo Xu, Junfeng Li, Yan Liu, Jeffrey Xu, Huaxiang Yin

Institutions: Chinese Academy of Sciences, Institute of Microelectronics, Huawei Technologies (China), Xidian University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G4554159039, G4727725958

OpenAlex ID: W4396982376

FWCI: 0.69

Cites: 22

Cited by: 7

Related to: 10