Work

Effect of Penetrating Radiation on Sensitivity of Magnetotransistors

Year: 2023

Type: article

Abstract: An experimental study of the effect of radiation emissions (neutrons, gamma radiation) on the sensitivity of industrial bipolar n-p-n magnetotransistors has been carried out. It has been shown that neutron irradiation leads to defects in the structure, which reduces the effective lifetime of the injected charge carriers and decreases the magnetosensitivity. Gamma radiation with increasing intensity first destroys the surface structural defects and increases the lifetime of carriers and magnetoresponsiveness, and then penetrates deeper forming defects and reducing magnetoresponsiveness. This makes it possible to use gamma radiation with an intensity of up to 107 R as a technological method of increasing magnetosensitivity.

Source: Radioelectronics and Communications Systems

DOI: 10.3103/s0735272723060055

Authors: Ivan Vikulin, Oleksandr Nazarenko, Lidiya Vikulina, Pavlo Markolenko

Institutions: State University of Intelligent Technologies and Telecommunications, Odesa State Agrarian University

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: green

OpenAlex ID: W4399337264

FWCI:

Cites: 3

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Related to: 10