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Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor

Year: 2024

Type: article

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c00418

Authors: Yinhui Chen, Yuping Jia, Yang Chen, Zhiming Shi, Shunpeng Lv, Ke Jiang, Mingrui Liu, Tong Wu, Dabing Li, Xiaojuan Sun

Institutions: Chinese Academy of Sciences, Changchun Institute of Optics, Fine Mechanics and Physics, University of Chinese Academy of Sciences, State Key Laboratory of Luminescence and Application

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1897276885, G4325260170, G4552809911, G5063899986

OpenAlex ID: W4399672124

FWCI: 0.625

Cites: 37

Cited by: 6

Related to: 10