Influence of Valence Band Offset at the Hole Transport Material/CH3NH3PbI3 Interface on Device Performance Using Fluorinated Spiro-OMeTAD
Year: 2024
Type: article
Source: ACS Applied Energy Materials
Institutions: Ritsumeikan University, Kyocera (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4400108626
