Work

Development of a Pb(Zr,Ti)O3 capacitor employing an IrO x /Ir bottom electrode for highly reliable ferroelectric random access memories

Year: 2024

Type: article

Source: Japanese Journal of Applied Physics

DOI: 10.35848/1347-4065/ad67e9

Authors: Nozomi Sato, Wensheng Wang, Takashi Eshita, Mitsuaki Oikawa, Masaaki Nakabayashi, Kazuaki Takai, Ko Nakamura, Kouichi Nagai, Satoru Mihara, Yukinobu Hikosaka, Hitoshi Saito

Institution: Fujitsu (Japan)

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4401010207

FWCI: 0.286

Cites: 33

Cited by: 3

Related to: 10