Work

A Novel Si/SiC Heterojunction Trench MOSFET with Electron Tunneling Enhanced and P+ Shielding Region for Improved On-State Resistance

Year: 2024

Type: conference-paper

Source: IEEE International Conference on Power Science and Technology (ICPST)

DOI: 10.1109/icpst61417.2024.10602073

Authors: Wei Chen, Jun Yuan, Fei Guo, Zhijie Cheng, Yangyang Wu, Kuan Wang, Guoqing Xin, Zhiqiang Wang

Institutions: Hubei Jiufengshan Laboratory, Huazhong University of Science and Technology

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

SDG: Industry, innovation and infrastructure

Open Access status: closed

OpenAlex ID: W4401017404

FWCI: 0.668

Cites: 13

Cited by: 1

Related to: 10