Work

Improving and Modeling Forward Gate ESD Behaviors of p-GaN Power HEMTs by Hybrid Gate Technology

Year: 2024

Type: article

Source: IEEE Electron Device Letters

DOI: 10.1109/led.2024.3435328

Authors: Yanfeng Ma, Sheng Li, Ran Ye, Denggui Wang, Weihao Lu, Mingfei Li, Lixi Wang, Chi Zhang, Jun Sun, Jiaxing Wei, Long Zhang, Siyang Liu, Lanlan Yang, Weifeng Sun

Institutions: Southeast University, The 28th Research Institute of China Electronics Technology Group Corporation

Language: English

Topic: Electrostatic Discharge in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G1645593414, G416956254, G5620386573, G7193422257, G7709543888

OpenAlex ID: W4401070513

FWCI: 0.476

Cites: 12

Cited by: 5

Related to: 10