Integration Challenges and Opportunities for Gate-All-Around FET (GAA FET) in Next-Generation Electronic Devices
Year: 2024
Type: book-chapter
Abstract: In the rapidly advancing landscape of semiconductor technology, Gate-All-Around FET (GAA FET) stands as a promising innovation poised to redefine the capabilities of next-generation electronic devices.This paper investigates the integration challenges and potential opportunities associated with the widespread adoption of GAA FET technology.Beginning with an overview of traditional transistor limitations, we delve into the fundamentals of GAA FET structures, emphasizing their operational advantages.The analysis highlights critical integration hurdles, encompassing fabrication complexities, scalability issues, material compatibility constraints, and manufacturing intricacies.Furthermore, this paper explores innovative strategies and solutions aimed at addressing these challenges, offering insights into the transformative impact of successful GAA FET integration on the performance, efficiency, and applications of future electronic devices.Ultimately, this study underscores the significance of resolving integration obstacles to unlock the full potential of GAA FETs in driving the evolution of electronic devices.
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: hybrid
OpenAlex ID: W4401072182