Work

Improved Stability of BEOL-Compatible Highly Scaled Ultrathin InZnO Channel Ferroelectric Thin-Film Transistor With TiO₂ Interfacial Layer

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3433835

Authors: Yan-Kui Liang, Wei-Li Li, Yu-Lon Lin, Dong-Ru Hsieh, Tsung-Ying Yang, Tsung-Te Chou, Chi-Chung Kei, Huai-Ying Huang, Yu-Ming Lin, Yuan-Chieh Tseng, Tien-Sheng Chao, Edward Yi Chang, Kasidit Toprasertpong, Shinichi Takagi, Chun-Hsiung Lin

Institutions: National Yang Ming Chiao Tung University, Taiwan Semiconductor Manufacturing Company (Taiwan), National Institutes of Applied Research, National Center for Instrumentation Research, The University of Tokyo

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: Taiwan Semiconductor Manufacturing Company

OpenAlex ID: W4401211891

FWCI: 0.286

Cites: 28

Cited by: 3

Related to: 10