Work

Correction to “Infrared Light Rewritable Optoelectronic Memories in Graphene-P(VDF-TrFE) Ferroelectric Field-Effect Transistor”

Year: 2024

Type: erratum

Source: ACS Applied Electronic Materials

DOI: 10.1021/acsaelm.4c01365

Authors: Yinhui Chen, Yuping Jia, Yang Chen, Zhiming Shi, Shunpeng Lv, Ke Jiang, Mingrui Liu, Tong Wu, Dabing Li, Xiaojuan Sun

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G1897276885, G4325260170, G4552809911, G5063899986

OpenAlex ID: W4401628858

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