Work

Investigation of BGaN Layer in Photodetector Structure

Year: 2024

Type: article

Source: IETE Journal of Research

DOI: 10.1080/03772063.2024.2390091

Authors: Zehor Allam, Badia Bouchachia, Chahrazad Boudaoud, Loumafak Hafaifa

Institutions: Ziane Achour University of Djelfa, University of Abou Bekr Belkaïd

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4401682804

FWCI: 0.471

Cites: 28

Cited by: 4

Related to: 10