Work

Investigation of Row Hammer and Passing Gate Effects Based on the Work Functions of Dual Gates in DRAM Cells

Year: 2024

Type: conference-paper

Source: IEEE Silicon Nanoelectronics Workshop

DOI: 10.1109/snw63608.2024.10639228

Authors: Hansol Kim, Jisung Im, Jinsu Kim, Seungmin Woo, Taeseong Kwon, Young Jun Yoon, Jong-Ho Bae, Sung Yun Woo

Institutions: Kyungpook National University, Gyeongkuk National University, Kookmin University

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4401808331

FWCI: 2.673

Cites: 1

Cited by: 4

Related to: 10