Work

Nanoscopic analysis of rapid thermal annealing effects on InGaN grown over Si(111)

Year: 2024

Type: article

Source: Materials Science in Semiconductor Processing

DOI: 10.1016/j.mssp.2024.108831

Authors: Rubén Martínez-Revuelta, Carlos A. Hernández-Gutiérrez, A. Escobosa-Echavarría, Beatriz Vargas Carosi, Francesca Peiró, Máximo López-López

Institutions: Tuxtla Gutierrez Institute of Technology, Tecnológico Nacional de México, Centro de Investigación y de Estudios Avanzados del Instituto Politécnico Nacional, Institut de Nanociència i Nanotecnologia de la Universitat de Barcelona, Universitat de Barcelona

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4401934775

FWCI: 0.226

Cites: 30

Cited by: 2

Related to: 10