Work

Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications

Year: 2024

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2024.3456763

Authors: Miaomiao Zhang, Haoji Qian, Jiacheng Xu, Minglei Ma, Rongzong Shen, Gaobo Lin, Jiani Gu, Yan Liu, Chengji Jin, Jiajia Chen, Genquan Han

Institutions: Xidian University, Zhejiang Lab

Language: English

Topic: Ferroelectric and Negative Capacitance Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Zhejiang Province

Awards: G1754546206, G2120584793, o-HZO/Bi2Se3 异质结能带结构的第一性原理研究, G7319174307

OpenAlex ID: W4402811162

FWCI: 0.761

Cites: 27

Cited by: 8

Related to: 10