Work

Strain-relieving mechanism in III-V semiconductors epitaxially grown on Si: misfit dislocations networks

Year: 2024

Type: conference-paper

Source: HAL

Authors: Gilbert, A, Graser, K, Trampert, A, Ramonda, M, Tournié, E, Rodriguez, J.-B

Institutions: Institut d'Électronique et des Systèmes, Paul Drude Institute for Solid State Electronics, Institut Universitaire de France

Language: English

Topic: Photonic and Optical Devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403522778

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