Work

Fast switching Ga2O3 Schottky barrier power diode with beveled-mesa and BaTiO3 field plate edge termination

Year: 2024

Type: article

Source: Applied Physics Letters

DOI: 10.1063/5.0231974

Authors: N. Sun, H. H. Gong, T. C. Hu, F. Zhou, Z. P. Wang, X. X. Yu, F.-F Ren, S. L. Gu, H. Lu, R. Zhang, J. D. Ye

Institution: Nanjing University

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, National Key Research and Development Program of China

Awards: G2474365359, G281605579, G4259696608, G4700815263, G512247061, G8553384389

OpenAlex ID: W4403608872

FWCI: 1.143

Cites: 27

Cited by: 15

Related to: 10