Work

Comprehensive Investigations on Recovery Characteristics of Bias Temperature Instability in Planar and Trench SiC MOSFETs

Year: 2024

Type: article

Source: IEEE Journal of Emerging and Selected Topics in Power Electronics

DOI: 10.1109/jestpe.2024.3485055

Authors: Kaiwei Li, Pengju Sun, Xinghao Zhou, Lan Chen, Qingsong Liu

Institution: Chongqing University

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Award: G3720819286

OpenAlex ID: W4403674747

FWCI: 0.381

Cites: 31

Cited by: 4

Related to: 10