Work

Pressure-induced phase transition and indirect band gap semiconductor in ZnSnN2: First Principles Calculation

Year: 2024

Type: article

Source: Journal of Solid State Chemistry

DOI: 10.1016/j.jssc.2024.125088

Authors: Wutthigrai Sailuam, Ittipon Fongkaew, Thanundon Kongnok, Komsilp Kotmool

Institutions: Rajamangala University of Technology Isan, Khon Kaen Campus, Suranaree University of Technology, King Mongkut's Institute of Technology Ladkrabang

Language: English

Topic: High-pressure geophysics and materials

Subfield: Geophysics

Field: Earth and Planetary Sciences

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4403971282

FWCI: 1.27

Cites: 34

Cited by: 6

Related to: 10