Work

A review of doped metal oxide semiconductors in the stability of thin film transistors

Year: 2024

Type: article

Source: Journal of Alloys and Compounds

DOI: 10.1016/j.jallcom.2024.177434

Authors: Zhihao Liang, Weijin Wu, Zhiqiang Fang, Zeneng Deng, Xiao Fu, Honglong Ning, Dongxiang Luo, Zhennan Zhu, Rihui Yao, Junbiao Peng

Institutions: State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou University, Dongguan University of Technology

Language: English

Topic: Thin-Film Transistor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Guangdong Province, Department of Education of Guangdong Province, State Key Laboratory of Luminescent Materials and Devices, Guangzhou Science and Technology Program key projects, National Key Research and Development Program of China, Science and Technology Planning Project of Guangdong Province, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G190790149, G2675241464, G3178813082, G3635187317, G3729529081, G4589078486, G4657090741, G4911555718, G5533168714, G7287851366, G756891005, G7669217038, G7948386125, G8498457729

OpenAlex ID: W4404095864

FWCI: 1.873

Cites: 108

Cited by: 18

Related to: 10