Year: 2024
Type: article
Abstract: Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal–organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene’s nonwetting properties, h-BN growth starts preferentially from the graphene ledges. We use this fact here to selectively promote the growth of high-quality flat h-BN on epigraphene by patterning epigraphene microstructures prior to BN growth. Thin h-BN films (down to 6 nm) grown by MOVPE show a smooth and pleated surface morphology on epigraphene, whereas crumpled BN is observed on the SiC. Cross-sectional high-resolution transmission electron microscopy images and fluorescence imaging confirm the higher BN quality grown on the epigraphene. Transport measurements reveal p-doping, as expected from hydrogen intercalation of epigraphene and regions of high and low mobility. This method can be used to produce structurally uniform high-quality h-BN/epigraphene micro/nanoscale heterostructures.
Source: Crystal Growth & Design
Authors: Vishnu Ottapilakkal, Abhishek Juyal, Suresh Sundaram, Phuong Vuong, Collin Beck, Noel L. Dudeck, Amira Bencherif, Annick Loiseau, Frédéric Fossard, Jean-Sebastien Mérot, David Chapron, Thomas H. Kauffmann, Jean-Paul Salvestrini, Paul L. Voss, Walt A. de Heer, Claire Berger, Abdallah Ougazzaden
Institutions: Centre National de la Recherche Scientifique, Georgia Tech-CNRS Laboratory, Georgia Institute of Technology, Georgia Tech-Europe, Université Paris-Saclay, Office National d'Études et de Recherches Aérospatiales, Laboratoire d'Étude des Microstructures, Supélec, Laboratoire Matériaux, Optique, Photonique et Systèmes, Université de Lorraine
Language: English
Subfield: Materials Chemistry
Field: Materials Science
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4404645083