64 Gb/s O-Band GeSi Quantum-Confined Stark Effect Electro-Absorption Modulators Integrated in a 300 mm Silicon Photonics Platform
Year: 2024
Type: article
Abstract: We report the recent progress of waveguide-coupled O-band GeSi quantum confined stark effect electroabsorption modulators, monolithically integrated in a Si photonics platform on 300 mm Silicon-on-insulator wafers with 220 nm thick Si top layer. A wafer-scale analysis of static insertion loss (IL) and extinction ratio (ER) is presented, showing IL down to 7.5 dB with ER of 5 dB for a 36.8 µm long device, at drive voltages of 2 V peak-to-peak. Modulation bandwidths beyond 50 GHz are demonstrated, with an extracted junction capacitance of 57 fF and series resistance of 8.3 Ω. Finally, open eye diagrams are demonstrated for non-return-to-zero on-off keying (NRZ-OOK) modulation for data rates from 40 Gb/s up to 64 Gb/s, with dynamic extinction ratio of 2.5 dB, at 1320 nm wavelength.
Source: Journal of Lightwave Technology
Authors: Ahmed Kandeel, Gaspard Hiblot, Clement Porret, Srinivasan Ashwyn Srinivasan, Yosuke Shimura, Roger Loo, Mathias Berciano, Chih-Kuo Neil Tseng, Dharmander Malik, Alexey Milenin, Didit Yudistira, Sadhishkumar Balakrishnan, Amir Shahin, Javad Rahimi Vaskasi, Peter Verheyen, Marianna Pantouvaki, Maumita Chakrabarti, Dimitrios Velenis, Filippo Ferraro, Yoojin Ban, Dries Van Thourhout, Joris Van Campenhout
Language: English
Topic: Photonic and Optical Devices
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: green
Funder: European Commission
OpenAlex ID: W4404708908