Work

Improved electrical properties of AlGaN/GaN MIS-HEMTs with thermal and plasma-enhanced ALD Al2O3 gate dielectric

Year: 2025

Type: article

Source: Semiconductor Science and Technology

DOI: 10.1088/1361-6641/adb880

Authors: Liu Wang, Peng Cui, Qianding Cheng, Ming Yang, Handoko Linewih, Kaifa Qi, Siheng Chen, Xin Luo, Jiacheng Dai, Zhaojun Lin, Xiangang Xu, Jisheng Han

Institutions: Shandong University, Beijing Orient Institute of Measurement and Test

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funders: National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Beijing Nova Program, Basic and Applied Basic Research Foundation of Guangdong Province

Awards: G1713804460, G3638994673, G5087355184, G8524224075

OpenAlex ID: W4407779080

FWCI: 0.646

Cites: 38

Cited by: 2

Related to: 10