Work

Correction to: Enhanced microstructure and electrical performance of a cost-effective Ni/Cu/n-GaN Schottky diode with a V2O5 interlayer for optoelectronic applications

Year: 2025

Type: erratum

Source: Journal of Materials Science Materials in Electronics

DOI: 10.1007/s10854-025-14590-9

Authors: Karri Aswini, K. Munirathnam, V. Manjunath, N. Nanda Kumar Reddy, Salh Alhammadi, Koppala Siva Kumar, Srinivas Reddy Golkonda, Vasudeva Reddy Minnam Reddy, Woo Kyoung Kim, R. Ranjith, Musarat Amina, S. Dastagiri

Institutions: REVA University, Sri Padmavati Mahila Visvavidyalayam, Yeungnam University, Rajiv Gandhi University of Knowledge Technologies, Mahatma Gandhi Institute of Technology, Saveetha University, King Saud University, Sri Krishnadevaraya University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: bronze

OpenAlex ID: W4409130692

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