GaSbBi Quantum Wells for Mid-Infrared Lasers
Year: 2025
Type: article
Abstract: Mid-infrared lasers are widely used in civilian and military applications. Interband cascade lasers and quantum cascade lasers are the most popular mid-infrared semiconductor lasers, which is difficult for growth, with low efficiency. GaSbBi is formed by introducing a small number of Bi atoms into GaSb, which reduces the matrix bandgap of about 39 meV/Bi%. GaSbBi quantum well (QW) lasers have already been fabricated, lasing at 2.7 μm. GaSb1–xBix/AlyGa1–yAs0.08ySb1–0.08y QWs on GaSb substrate is proposed to fabricated mid-infrared lasers. The band structures of GaSbBi/AlGaAsSb QWs with different Bi contents, Al contents and well thicknesses are calculated. Light emission from 1.4 to 6.2 μm can be achieved from GaSbBi QWs with well thicknesses of 5–20 nm, Bi contents of 0.01–0.15 and Al contents of 0–1.0. A 5 µm laser was designed with a 15 nm GaSbBi0.141/Al0.5Ga0.5As0.04Sb0.96 QW acting as the active region and the device performance was further calculated. The optical confinement factor is about 5.45% and the threshold current density is 393 A/cm2.
Source: Physics of the Solid State
Authors: Youxiang Cao, Liyao Zhang
Institution: University of Shanghai for Science and Technology
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: diamond
OpenAlex ID: W4409428014