Work

Frequency-dependent interface states and diode parameters of Au/n-Si Schottky diode with BOD-Z-EN interfacial layer in dark and under illumination

Year: 2025

Type: article

Source: Physica B Condensed Matter

DOI: 10.1016/j.physb.2025.417273

Authors: Ali Osman Tezcan, Asrın Baran Çavdar, Serkan Eymur, Nihat Tuğluoğlu

Institutions: Giresun University, Hacettepe University

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: green

Funder: İzmir Yüksek Teknoloji Enstitüsü

OpenAlex ID: W4409464624

FWCI: 1.636

Cites: 64

Cited by: 11

Related to: 10