Work

Versatile optoelectronic memristor based on wide-bandgap Ga2O3 for artificial synapses and neuromorphic computing

Year: 2025

Type: article

Abstract: Optoelectronic memristors possess capabilities of data storage and mimicking human visual perception. They hold great promise in neuromorphic visual systems (NVs). This study introduces the amorphous wide-bandgap Ga 2 O 3 photoelectric synaptic memristor, which achieves 3-bit data storage through the adjustment of current compliance ( I cc ) and the utilization of variable ultraviolet (UV-254 nm) light intensities. The “AND” and “OR” logic gates in memristor-aided logic (MAGIC) are implemented by utilizing voltage polarity and UV light as input signals. The device also exhibits highly stable synaptic characteristics such as paired-pulse facilitation (PPF), spike-intensity dependent plasticity (SIDP), spike-number dependent plasticity (SNDP), spike-time dependent plasticity (STDP), spike-frequency dependent plasticity (SFDP) and the learning experience behavior. Finally, when integrated into an artificial neural network (ANN), the Ag/Ga 2 O 3 /Pt memristive device mimicked optical pulse potentiation and electrical pulse depression with high pattern accuracy (90.7%). The single memristive cells with multifunctional features are promising candidates for optoelectronic memory storage, neuromorphic computing, and artificial visual perception applications.

Source: Light Science & Applications

DOI: 10.1038/s41377-025-01773-6