Work

Polarization effect on the Auger recombination coefficient in single InGaN/GaN quantum wells

Year: 2025

Type: article

Source: Physica B Condensed Matter

DOI: 10.1016/j.physb.2025.417278

Authors: V.S. Slipokurov, A.V. Zinovchuk

Institutions: National Academy of Sciences of Ukraine, V.E. Lashkaryov Institute of Semiconductor Physics, Zhytomyr Ivan Franko State University

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409563243

FWCI: 0.223

Cites: 34

Cited by: 1

Related to: 10