Work

Experimental and simulation analyses of bulk GaN-based metal-semiconductor-metal ultraviolet photodetectors

Year: 2025

Type: article

Source: Materials Science and Engineering B

DOI: 10.1016/j.mseb.2025.118323

Authors: Momin S.M. Abutawahina, A.M. Alghareeb Abbas, N.A. Hamzah, S.S. Ng, H.J. Quah, Naser M. Ahmed, M. Shaveisi

Institutions: Universiti Sains Malaysia, Dijlah University College, Aerospace Research Institute, Ministry of Science, Research and Technology

Language: English

Topic: GaN-based semiconductor devices and materials

Subfield: Condensed Matter Physics

Field: Physics and Astronomy

Domain: Physical Sciences

Open Access status: closed

Funder: Ministry of Higher Education, Malaysia

OpenAlex ID: W4409634331

FWCI: 3.152

Cites: 40

Cited by: 14

Related to: 10