Work

Design and Fabrication of a Novel 1200 V 4H-SiC Trench MOSFET With Periodically Grounded Trench Bottom Shielding

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3559888

Authors: Jun Yuan, Wei Chen, Fei Guo, Kuan Wang, Zhijie Cheng, Yangyang Wu, Shaodong Xu, Rong Zhang, Guoqing Xin, Zhiqiang Wang

Institutions: Huazhong University of Science and Technology, Hubei Jiufengshan Laboratory

Language: English

Topic: Silicon Carbide Semiconductor Technologies

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4409883136

FWCI: 2.177

Cites: 20

Cited by: 11

Related to: 10