Work

The role of etching gas purity in C4F8/Ar plasma to optimize SiO2 etching process

Year: 2025

Type: article

Source: Microelectronic Engineering

DOI: 10.1016/j.mee.2025.112353

Authors: Anhan Liu, Shijun Yu, Shingo Nakamura, Akinari Sugiyama, Takashi Nishikawa, Dongwei Xu, Xiao Jin, Daixuan Wu, He Tian

Institutions: Beijing National Research Center for Information Science and Technology, Tsinghua University, Daikin (Japan)

Language: English

Topic: Low-Pressure Plasma Processing and Diagnostics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funders: Social Trends Institute, National Natural Science Foundation of China, Tsinghua University, Natural Science Foundation of Beijing Municipality

Awards: G5357783281, G7740319280, G8691733958

OpenAlex ID: W4410019987

FWCI: 0.396

Cites: 16

Cited by: 2

Related to: 10