Work

Tuning barrier height and enhancing electrical properties of MOS heterojunctions using Fe2O3 doped MoO3 nanocomposite interlayer on Ni/Cr/n-GaN for optoelectronic devices

Year: 2025

Type: article

Source: Physica B Condensed Matter

DOI: 10.1016/j.physb.2025.417422

Authors: Karri Aswini, Chaitanya Kumar Kunapalli, K. Munirathnam, V. Manjunath, Cuddapah Dhananjaya Rao, Purusottam Reddy Bommireddy, Si-Hyun Park, Youngsuk Suh, Yedluri Anil Kumar, Ezhakudiyan Ravindran

Institutions: REVA University, Sri Padmavati Mahila Visvavidyalayam, Navoi State University, Yeungnam University, Saveetha University, SRM Institute of Science and Technology

Language: English

Topic: Semiconductor materials and interfaces

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4410845641

FWCI: 0.595

Cites: 52

Cited by: 4

Related to: 10