Advanced effective work function model for photo-oxided GaAs and GaSb surfaces
Year: 2025
Type: article
Abstract: Electronic processes at the oxidized surfaces of III-As and III-Sb semiconductors have been shown to possess a similar nature. In order to reveal this nature, a combined Raman spectroscopy and scanning Kelvin probe microscopy study of the GaAs and GaSb surfaces with both p- and n-type doping was performed. In addition, the thickness and composition of the native oxide was controlled by laser photo-oxidation. The study revealed a unified process for the formation of a group-V elements surface layer during oxidation and photo-oxidation. The oxidation or photo-oxidation conditions determine whether an amorphous or crystalline layer is formed. Kelvin probe microscopy reveals a correlation between surface potential difference and work function in areas with amorphous and crystalline layers. The study of the work function of the p- and n-type samples has enabled the advancement of the effective work function model and the elucidation of the dependence of the work function on the type and level of doping for III-As and III-Sb semiconductors.
Authors: P.A. Alekseev, V.A. Sharov
Institution: Ioffe Institute
Language: English
Subfield: Atomic and Molecular Physics, and Optics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: hybrid
Estimated APC paid: $3,540
OpenAlex ID: W4411434603