Year: 2025
Type: preprint
Abstract: The stability of schottky p-GaN HEMTs' electrical characteristics is currently under thorough investigation. While their quasi-static behavior is well addressed, their dynamic behavior is much more difficult to comprehend. To tackle this issue, we apply varying gate voltage waveforms simultaneously with a realistic on-time and blocking voltage, for the first time in literature. This experiment reveals a global, dynamic-only, reproducible and non-degrading impact of gate voltage spikes on the devices' switching waveforms. Strikingly, realistic gate voltage spikes lead to a up to fifty times Ron increase. We explain these phenomena as a structural interaction between the two diodes of the schottky gate. The drastic, global impact of gate spikes on the devices' dynamic operation as a whole call for further investigations. Indeed, the evidenced mechanisms could prove more stressful than gate voltage spikes in drain-source grounded operation, contrarly to current estimations. Finally, we evidence distinct mechanisms for low and high voltage spikes, which jeopardizes state-of-the-art accelerated lifetime assessment methodologies.
Language: English
Subfield: Condensed Matter Physics
Field: Physics and Astronomy
Domain: Physical Sciences
Open Access status: green
OpenAlex ID: W4411643449