Work

Influence of annealing treatment duration on the formation of Tb4O7 passivation layer on Si substrate in argon ambient

Year: 2025

Type: conference-paper

Source: AIP conference proceedings

DOI: 10.1063/5.0277683

Authors: Abubakar A. Sifawa, Sabah M. Mohammad, A. Muhammad, Md Rumon Shahrier, Shireen Mohammed Abed, Mundzir Abdullah, Way Foong Lim

Institutions: Universiti Sains Malaysia, Sokoto State University, Sule Lamido University Kafin Hausa, University of Anbar

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4411998569

FWCI:

Cites: 27

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Related to: 10