Work

ALD Polycrystalline Ga-Doped In 2 O 3 (Poly-IGO) Nanosheet Exceeding Intrinsic Mobility of 120 cm 2 /Vs for Process-Friendly BEOL-Compatible FET Application

Year: 2025

Type: conference-paper

Source: IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

DOI: 10.23919/vlsitechnologyandcir65189.2025.11074862

Authors: Takanori Takahashi, Takuya Hoshii, Yuki Tsuruma, Misa Sunagawa, Shigekazu Tomai, Jongho Park, Hiroki Tamamoto, Kuniyuki Kakushima, Yukiharu Uraoka

Institutions: Nara Institute of Science and Technology, Institute of Science Tokyo, Idemitsu Kosan (Japan)

Language: English

Topic: Semiconductor materials and devices

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4412964947

FWCI: 12.08

Cites: 2

Cited by: 7

Related to: 10