Work

Analysis of the Temperature Dependence of the Capacitance of NiO / Ga2O3 Heterojunction Diodes Using Analytical and PSO Modelling

Year: 2025

Type: article

Source: International Journal of Numerical Modelling Electronic Networks Devices and Fields

DOI: 10.1002/jnm.70103

Authors: Yasmine Senouci, Nouredine Sengouga, Elyes Garoudja, Madani Labed, Abdulaziz Almalki, Mohamed Henini, Yuan Qin, Yuhao Zhang

Institutions: University of Biskra, Centre de Développement des Technologies Avancées, Sejong University, Taibah University, University of Nottingham, Virginia Tech, University of Hong Kong

Language: English

Topic: Ga2O3 and related materials

Subfield: Electronic, Optical and Magnetic Materials

Field: Materials Science

Domain: Physical Sciences

SDG: Affordable and clean energy

Open Access status: closed

OpenAlex ID: W4413295083

FWCI: 0.149

Cites: 52

Cited by: 1

Related to: 10