Work

Experimental Insights into Impurity Incorporation in Chemical Vapor Deposition Doped Diamond

Year: 2025

Type: article

Abstract: Diamond's exceptional properties as a wide bandgap semiconductor make it a leading candidate for next‐generation power electronics and quantum technologies. However, achieving precise control over the incorporation of active dopants, such as boron, phosphorus, and nitrogen, remains a key challenge in the fabrication of diamond‐based devices. Herein, over 100 literature sources are reviewed and analyzed to evaluate and compare dopant incorporation efficiency in single‐crystal diamond synthesized via chemical vapor deposition. It also incorporates some data from polycrystalline layers for broader comparison. Specifically, the influence of dopant precursor concentration in the plasma and substrate orientation is investigated. The findings offer new insights and provide a useful reference metric for optimizing doped diamond synthesis.

Source: physica status solidi (a)

DOI: 10.1002/pssa.202500461

Authors: Vincent Mortet, Axel Leschiutta

Institutions: FZU - Institute of Physics of the Czech Academy of Sciences, Czech Technical University in Prague, Centre National de la Recherche Scientifique, Université de Lille, Centrale Lille Institut

Language: English

Topic: Diamond and Carbon-based Materials Research

Subfield: Materials Chemistry

Field: Materials Science

Domain: Physical Sciences

Open Access status: hybrid

Estimated APC paid: $3,780

Funder: Grantová Agentura České Republiky