Work

Capacitance Modulation in Trench MOSFETs Induced by TID Radiation Charge

Year: 2025

Type: article

Source: IEEE Transactions on Electron Devices

DOI: 10.1109/ted.2025.3609726

Authors: Shenghuai Liu, Xin Zhou, Zhao Wang, Huan Gao, Qingchen Jiang, Hongze Chu, Hao Jiang, Fan Xiang, Jun Ye, Bo Zhang

Institutions: University of Electronic Science and Technology of China, State Key Laboratory of Electronic Thin Films and Integrated Devices, China Electronics Technology Group Corporation, China Resources (China)

Language: English

Topic: Radiation Effects in Electronics

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

Funder: National Natural Science Foundation of China

Awards: G311549450, G9000206819

OpenAlex ID: W4414432151

FWCI:

Cites: 27

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