Work

Impact of Gate Recess Descum on the DC and RF Characteristics of AlInAs/GaInAs High-Electron Mobility Transistors

Year: 2025

Type: conference-paper

Source: International Conference on Solid State Devices and Materials (SSDM)

DOI: 10.7567/ssdm.2025.ps-04-20

Authors: Fran Kostelac, Giorgio Bonomo, Tamara Saranovac, Diego Marti, Ralf Flückiger, Olivier J.S. Ostinelli, Colombo R. Bolognesi

Language: English

Topic: Advancements in Semiconductor Devices and Circuit Design

Subfield: Electrical and Electronic Engineering

Field: Engineering

Domain: Physical Sciences

Open Access status: closed

OpenAlex ID: W4415236256

FWCI:

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