Study on the temperature effect on heavy ion-induced leakage current in p-GaN gate HEMTs
Year: 2025
Type: article
Source: Physica Scripta
Authors: Dan Han, Hanxun Liu, Dongping Yang, Rongxing Cao, Yuanyuan Xue, Chengan Wan, Xuelin Yang, Xiao Chen, Weixiang Zhou, Yuxiong Xue
Institutions: Yangzhou University, Peking University
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4416450511