Time-Dependent Quantized Conductance Degradation in High-K Switching Devices Treated with H-Plasma
Year: 2025
Type: conference-abstract
Source: ECS Meeting Abstracts
Institutions: New Jersey Institute of Technology, Tokyo Electron (Japan)
Language: English
Subfield: Electrical and Electronic Engineering
Field: Engineering
Domain: Physical Sciences
Open Access status: closed
OpenAlex ID: W4416601307
